Nature of Secondary Defects in Silicon Produced by High Temperature Electron Irradiation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-01-05
著者
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Furuno Shigemi
Japan Atomic Energy Research Institute
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IZUI Kazuhiko
Japan Atomic Energy Research Institute
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OTSU Hitoshi
Japan Atomic Energy Research Institute
関連論文
- Electron Energy-Loss Spectroscopy Study of Amorphization Process of Graphite Bombarded with Hydrogen lons and Energrtic Electrons at Low Temperatures
- Defect Clusters in Germanium Crystals Irradiated with Electrons in a High Voltage Electron Microscope
- Observation of Lattice Defects in Fission Fragment-irradiated Graphite
- Crystal nucleation behavior caused by annealing of SiC irradiated with Ne at liquid nitrogen temperature or at 573K
- Recrystallization by annealing in SiC amorphized with Ne irradiation
- Effect of Crystal Imperfections on Emission of X-Ray by Electron Bombardment in Copper Crystals
- Electron Microscopic Study of Fission Fragment Damage in Molybdenite Crystals
- Observation of the Tracks of Fission Fragments in Molybdenite
- Observation of Lattice Defects in Graphite by Electron Microscopy, Part I
- Nature of Secondary Defects in Silicon Produced by High Temperature Electron Irradiation
- Experimental Determination of Depth Distribution Function of Carbon K_α-Rays
- Observation of Anisotropic Damage Production in Electron-Irradiated Molybdenum
- Energy Distributions of High Energy Primary Knock-ons Produced by Fission Fragments