Increase of Substrate Temperature in High Rate Coaxial Cylindrical Magnetron Sputtering

概要

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In a high rate sputtering system the ratio of the incident heat density P^* to the deposition rate D was measured with two kinds of target configurations:an end-plated magnetron (EPM) and an internal magnets magnetron (IMM). The value of P^*/D in the EPM was about 1/25 as large as that for conventional rf planar diode sputtering. In the IMM, when the substrate was at the ground potential, the value of P^*/D was larger than that of the EPM. However, when the substrate was isolated from the ground, these values were almost the same. This phenomenon can be explained from the current-voltage characteristics of the substrate in the plasma. The EPM and the cold mode IMM were proved to be effective to keep the substrate temperature under a desired one during sputtering.
社団法人応用物理学会の論文
1978-05-05