AlGaAs/GaAs Monolithic LED/Amplifier Circuit Fabricated by Molecular Beam Epitaxy : LATE NEWS

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-02-28

著者

• Sanada T.

  Fujitsu Limited

• FUJII T.

  Fujitsu Laboratories Ltd.

• WADA O.

  Fujitsu Limited

• HAMAGUCHI H.

  Fujitsu Limited

• HIYAMIZU S.

  Fujitsu Limited

• SAKURAI T.

  Fujitsu Limited

関連論文

• 1.3μm Semiconductor Lasers on InGaAs Ternary Substrates Toward Low-Threshold and Temperature Insensitive Operation
• AlGaAs/GaAs Monolithic LED/Amplifier Circuit Fabricated by Molecular Beam Epitaxy : LATE NEWS
• 1.5V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors

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