Modified Schottky Barrier Heights by Interfacial Doped Layers: MBE Al on GaAs : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Spicer W.
Stanford Electronics Laboratories Stanford University
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EGLASH S.
Stanford Electronics Laboratories, Stanford University
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PAN Shihong
Stanford Electronics Laboratories, Stanford University
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MO Dang
Stanford Electronics Laboratories, Stanford University
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COLLINS D.
Solid State Laboratory
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Mo Dang
Stanford Electronics Laboratories Stanford University
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Eglash S.
Stanford Electronics Laboratories Stanford University
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Pan Shihong
Stanford Electronics Laboratories Stanford University