Substrate Bias and Pressure Effect on Formation of YBaCuO Thin Films in RF Magnetron Sputtering System

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概要

• 論文の詳細を見る

• Effect of substrate bias on formation of YBaCuO films at various pressures by the rf magnetron sputtering method is studied. It is found that the best films are obtained at the optimum bias voltage with regard to the end point of the critical temperature. The optimum substrate bias lowers the energy of ions which damage YBaCuO films. Furthermore, this optimum bias approaches 0 V when the total pressure becomes higher, where the energy of ions is small.

• 社団法人応用物理学会の論文
• 1991-06-01

著者

• Sugiura Masayuki

  Rcast University Of Tokyo

• Okabe Yoichi

  Rcast University Of Tokyo

• Nakagawa Akira

  Rcast University Of Tokyo

• Okabe Yoichi

  Rcast The University Of Tokyo

関連論文

• Interface-Modified Ramp-Type Josephson Junctions in Trilayer Structures.
• Substrate Bias and Pressure Effect on Formation of YBaCuO Thin Films in RF Magnetron Sputtering System

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