Improvement of the Safe Operating Area for P-Channel Insulated-Gate Bipolar Transistors (IGBTs)
スポンサーリンク
概要
- 論文の詳細を見る
- 1991-06-01
著者
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Kumagai Naoki
Advanced Device Technology Laboratory Fuji Electric Corporation Research & Development Ltd.
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Ueno Katsunori
Advanced Device Technology Laboratory Fuji Electric Corporation Research & Development Ltd.
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Hoshi Yasuyuki
Advanced Device Technology Laboratory, Fuji Electric Corporation Research & Development Ltd.
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Iwamuro Noriyuki
Advanced Device Technology Laboratory, Fuji Electric Corporation Research & Development Ltd.
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Hashimoto Osamu
Advanced Device Technology Laboratory, Fuji Electric Corporation Research & Development Ltd.
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Hoshi Yasuyuki
Advanced Device Technology Laboratory Fuji Electric Corporation Research & Development Ltd.
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Iwamuro Noriyuki
Advanced Device Technology Laboratory Fuji Electric Corporation Research & Development Ltd.
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Hashimoto Osamu
Advanced Device Technology Laboratory Fuji Electric Corporation Research & Development Ltd.
関連論文
- Improvement of the Safe Operating Area for P-Channel Insulated-Gate Bipolar Transistors (IGBTs)
- Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors