Determination of the Critical Dimension and Proximity Bias Variations Across the Lens Field by Electrical Linewidth Measurements

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概要

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• Electrical critical dimension (CD) measurements are now widely used as a characterization technique in optical lithography. In this paper this technique is applied to the determination of the CD and proximity bias variations across the lens field. A method, based on statistical considerations, is introduced to decorrelate the contribution of the mask to the global Across Field linewidth variation (AFLV). It is shown that the mask CD dispersion has an important contribution in the total CD range observed on the wafer. By using this technique, a lens quality determination has been done and the optical contribution to the field CD dispersion has been determined. Moreover, because it is a fast and accurate technique, we show that electrical linewidth measurements can be used in a lens characterization procedure. Results obtained indicate that the proximity bias dispersion across the lens field is not negligible and the question of a dependent field position correction is raising up.

• 社団法人応用物理学会の論文
• 1998-12-30

著者

• Boutin Daniel

  Cnet Dtm

• TOUBLAN Olivier

  France Telecom

• BOUTIN Daniel

  CNET, DTM

• SCHIAVONE Patrick

  TFM

関連論文

• Determination of the Critical Dimension and Proximity Bias Variations Across the Lens Field by Electrical Linewidth Measurements

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