Mask Patterning Challenges Beyond 150 nm

概要

論文の詳細を見る
Mask patterning strategy must anticipate future requirements and be flexible enough to accommodate the broad range of options currently confronting the industry. The assessment and prioritization of the technical challenges for mask pattern generation are based on three attributes: lithography quality, throughput, and pattern processing complexity. A systems approach to integrating these features is guided by an error budget and evaluation of the various tradeoffs to identify and, if possible, optimize the total tool and process solution that meets the critical customer needs in semiconductor manufacturing. This paper evaluates several key drivers influencing pattern generation technology. Writing strategy that can achieve requisite pattern fidelity and throughput is considered. This paper discusses evolution of the pixel concept, design grid, and beam spot size. It also considers the growing complexity of error budget terms needed to meet composite lithographic specifications. It gives several examples of important error budget contributors and includes the relation of aerial image slope, deposited dose, and critical dimension transferred to the mask. Observations are made about the required data path channel capacity as pattern processing complexity grows. An evolutionary systems architecture that meets the increasingly complex demands of the technology roadmap is summarized.
社団法人応用物理学会の論文
1998-12-30