Lateral Positioning and Vertical Stacking of InAs Islands on GaAs Substrates : Designing Quantum Transport Devices

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概要

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• Some prospects and constraints for coupling strained islands into strongly modulated one-dimensional electronic systems and using them as quantum transport devices are assessed. Two device structures, a diode and a triode, are proposed for the InAs on GaAs system. The proposals rely on published evidence of vertical island coupling on flat substrates and lateral island positioning on patterned substrates. An aim of this report is to connect the properties and requirements for quantum transport devices to the electronic structure parameters and technology coming from crystal growth experiments.

• 社団法人応用物理学会の論文
• 1997-06-30

著者

• Miller Mark

  Department Of Solid State Physics Lund University

関連論文

• Lateral Positioning and Vertical Stacking of InAs Islands on GaAs Substrates : Designing Quantum Transport Devices

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