Electronic States in Crescent-Shaped GaAs Coupled Quantum Wires

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概要

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• The electronic states in crescent-shaped GaAs coupled quantum wires on V-grooved substrate have been investigated by theoretical analysis using the finite element method (FEM). The doublet state, namely the symmetric and antisymmetric states, and the transverse electron states in crescent-shaped coupled quantum wires are clarified. The conditions of the coupling and the effect of the thickness disparity between two quantum wires are also clarified. The preliminary experiment on the photoluminescence (PL) characteristics of the crescent-shaped coupled quantum wires, fabricated on V-grooved substrate, are compared to the results obtained by the theoretical analysis. The observed PL peak splittings have been explained by the energy splitting between the symmetric and the antisymmetric states in the theoretical analysis. The experimental results are in good agreement with the results of theoretical analysis for weakly coupled quantum wires.

• 社団法人応用物理学会の論文
• 1997-03-30

著者

• KOMORI Kazuhiro

  Electrotechnical Laboratory (ETL), AIST, MITI

• Komori Kazuhiro

  Electrotechnical Laboratory Agency Of Industrial Science And Technology Ministry Of International Tr

• Arakawa Masumi

  Faculty of Science and Technology, Science University of Tokyo

• Arakawa Masumi

  Faculty Of Science And Technology Science University Of Tokyo

関連論文

• Electron States in Crescent GaAs Coupled Quantum-Wires
• Ultrafast Coherent Control of Excitons Using Pulse-Shaping Technique
• Manipulation of Coherent Exciton towards Novel Ultrafast Devices
• Electronic States in Crescent-Shaped GaAs Coupled Quantum Wires

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