"Universal" Dependence of Avalanche Breakdown on Bandstructure: Choosing Materials for High-Power Devices

スポンサーリンク

概要

• 論文の詳細を見る

• A new simple phenomenological relation between the breakdown voltage V_b and the bandstructure in semiconductor junctions is presented. For narrow-gap semiconductors, V_b scales with the minimum energy gap (E_g) as has been previously reported. However, for wide-gap materials including GaAs, InP, etc., V_b is linearly dependent on <E>, a Brillouin-zone-averaged energy gap. Values of <E> are determined from accurate quasi-particle band-structures for 25 tetrahedral semiconductors. We discuss the origin of this relation and the role of the ionisation probability and electron-phonon scattering rate. The relation can be used to predict the breakdown voltage in semiconductors and semiconductor alloys.

• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Allam J

  Hitachi Cambridge Laboratory Hitachi Europe Limited Cavendish Laboratory

• Allam Jeremy

  Hitachi Cambridge Laboratory

関連論文

• "Universal" Dependence of Avalanche Breakdown on Bandstructure : Choosing Materials for High-Power Devices
• "Universal" Dependence of Avalanche Breakdown on Bandstructure: Choosing Materials for High-Power Devices
• Photonic Sampling of Ultrafast Electronic Devices : Bridging the Measurement Gap

スポンサーリンク