Effects of Electrode Materials and Annealing Ambients on the Electrical Properties of TiO_2 Thin Films by Metalorganic Chemical Vapor Deposition

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概要

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• In this work, we investigate the effects of the top electrode materials and annealing ambients on the electrical properties of chemical-vapor-deposited (CVD) TiO_2 films. Experimental results indicate that the leakage current is mainly determined by the work function of electrode materials before sintering. The capacitor with TaN top electrode reveals the least leakage. After 450℃and 800℃ sintering in N_2, owing to its thermal stability, WN is found to be the optimal material for withstanding high-temperature thermal treatment. From the annealing ambient results, N_2O was more effective than O_2 in reducing leakage current, and furnace annealing in N_2O, (FN_2O) produces the smallest leakage. Such a phenomenon is primarily owing to the reduction of oxygen vacancies and carbon concentration in TiO_2 by the atomic oxygen generated by the dissociation of N_2O during the thermal cycle, thereby improving film quality.

• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Sun S

  Taiwan Semiconductor Manufacturing Co. Hsincha Twn

• Sun S.C.

  Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University

• Chen T.F.

  Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University

関連論文

• Effects of Electrode Materials and Annealing Ambients on the Electrical Properties of TiO_2 Thin Films by Metalorganic Chemical Vapor Deposition

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