Resist Development Mechanism Study : Its Effect on the Submicron Microlithography Process Window

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概要

• 論文の詳細を見る

• The resist development mechanism of both spray puddle and stream puddle methods was addressed in thispaper. Two mechanisms were proposed : the pressure effect in which the spray pressure contributes to the development rate of line/space structure layers, but has little influence on the developing mechanism of the contact hole;and the geometry effect in which the developer solution is more freely diffused in the line/space structure than inthe contact hole. These mechanisms have been verified in this study.

• 社団法人応用物理学会の論文
• 1994-12-30

著者

• Lee Daniel

  Process Technology Development Department T300 Submicron Laboratory Electronics Research And Service

• DAI Chang-Ming

  Process Technology Development Department, T300, Submicron Laboratory, Electronics Research and Serv

• LIN Hwang-Kuen

  Process Technology Development Department, T300, Submicron Laboratory, Electronics Research and Serv

• Dai C‐m

  Industrial Technol. Res. Inst.(itri) Hsinchu Twn

• Lin Hwang-kuen

  Process Technology Development Department T300 Submicron Laboratory Electronics Research And Service

関連論文

• Resist Development Mechanism Study : Its Effect on the Submicron Microlithography Process Window

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