2×2 Phase Mask for Arbitrary Pattern Formation

スポンサーリンク

概要

• 論文の詳細を見る

• The phase-shifting mask (PSM) extends the resolution limit of optical lithography. The major hurdle to the widespread use of PSMs is that high resolution can be obtained only for the limited pattern layouts with the PSMs. In this paper, we describe the double exposure method with a pair of 2 phase masks ("2 × 2 phase mask")for arbitrary two-dimensional pattern formation. Simple mask design procedures which are based on a few rules are derived from the imaging characteristics of alternating PSMs. With a 2 × 2 phase mask, complicated pattern sincluding large scale integration (LSI) patterns are successfully fabricated.

• 社団法人応用物理学会の論文
• 1994-12-30

著者

• Pati Yagyensh

  Stanford University

• Pease R.fabian

  Stanford University

• WATANABE Hisashi

  Matsushita Electronics Corp.,

• Watanabe Hisashi

  Matsushita Electronics Corp.

関連論文

• 2×2 Phase Mask for Arbitrary Pattern Formation

スポンサーリンク