The Effect of Amorphous Layer at NiCr/Ni Silicide Interface on the Sheet Resistivity of Ni Silieides

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概要

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• Two sets of samples with different interfacial amorphous layers were prepared: one with Pt impurity (Ptprocess) and the other without Pt impurity (Pt-free process) at NiCr/Si interfaces. Following annealing, Cr-rich amorphous layers (a-layers) with and without Pt impurity formed at NiCr/Ni silicide interfaces, respectively. These a-layers control the formation and the growth of Ni silicides. The Ptimpurity seems to move with the a-layers and suppress the growth of the a-layers. The a-layers without Pt impurity are therefore thicker and thermally more stable. The thicker a-layers result in larger silicide grains and more uniform silicide layers. Thus, Ni silicides with low sheet resistivity can be obtained by this Pt-free process.

• 社団法人応用物理学会の論文
• 1994-12-15

著者

• Lee Ju-hyeon

  Center For Science And Advanced Technology Department Of Materials Science And Engineering Sun Moon

関連論文

• The Effect of Amorphous Layer at NiCr/Ni Silicide Interface on the Sheet Resistivity of Ni Silieides

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