Current Oscillation in Semiconductors with a Dumbbell-Shaped Structure

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概要

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• The necessary conditions for the occurrence of current oscillation, observed in the current-saturation regime regarding the current-voltage characteristics of semiconductors with a dumbbell-shaped structure, have been investigated by varying the carrier densities through illumination and heat. It is necessary to establish an oscillation of the space-charge layer in the wide region at the anode side at the devices. It is also necessary that the electric field at the boundary between thewide region on the anode side and the narrow region exceeds a critical value, above which the velocity of electrons or holes deviates from Ohm's law and becomes saturated.

• 社団法人応用物理学会の論文
• 1985-12-20

著者

• Hirasawa Masao

  Fuculty Of Science And Technology Keio University

• Oinuma Morihide

  Fuculty Of Science And Technology Keio University

• Kuwano Hiroshi

  Fuculty Of Science And Technology Keio University

• MURAYAMA Takashi

  Fuculty of Science and Technology, Keio University

• Murayama T

  Keio Univ. Yokohama

関連論文

• Current Oscillation and Potential Oscillation in Semiconductors with a Dombbell-Shaped Structure
• Current Oscillation in Semiconductors with a Dumbbell-Shaped Structure

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