Improvement in Trade-Off between Turn-Off Time and Other Electrical Characteristics of Fast-Switching Thyristors

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概要

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• Trade-offs between turn-off time, on-state voltage and reverse blocking voltage should be improved in producing fast-switching thyristors with higher blocking voltage and current handling capabilities. It is well known that the electrical characteristics of a thyristor depend strongly on the gold distribution in its n_B layer. The influence of a boron-diffused layer on the gold distribution in a silicon wafer has been investigated. It has been found that the gold distribution gradient in the central region of the wafer is varied by the existence of a highly-concentrated layer of boron on one side of the wafer, and that if this phenomenon is applied to the production of thyristors, the trade-offs between turn-off time, on-state voltage and reverse blocking voltage are greatly improved. Further, the effect of the gold distribution gradient on the turn-off time, on-state voltage and reverse leakage current is discussed theoretically.

• 社団法人応用物理学会の論文
• 1982-04-20

著者

• Tada Akiharu

  Semiconductor Manufacturing Department Kita-itami Works Mitsubishi Electric Corporation

• NAKAGAWA Tsutomu

  Semiconductor Manufacturing Department, Kita-Itami Works, Mitsubishi Electric Corporation

• HAGINO Hiroyasu

  Semiconductor Manufacturing Department, Kita-Itami Works, Mitsubishi Electric Corporation

• Hagino Hiroyasu

  Semiconductor Manufacturing Department Kita-itami Works Mitsubishi Electric Corporation

• Nakagawa Tsutomu

  Semiconductor Manufacturing Department Kita-itami Works Mitsubishi Electric Corporation

関連論文

• Improvement in Trade-Off between Turn-Off Time and Other Electrical Characteristics of Fast-Switching Thyristors
• The Influence of Phosphorus Concentration in the n-Emitter Region on Turn-Off Characteristics of a Thyristor
• The Influence of Boron Concentration in P-Emitter Region on Characteristics of a Thyristor

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