Observation of the Recombination Radiation from Silicon p-n Junction

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概要

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• The recombination radiation from forward biased p-n junctions of silicon is visualized by use of an infrared image converter tube. It is found from the pattern of the radiation at the junctions that the diffusion length of minority carriers is structure sensitive, especially at 80°K. The life time estimated from the decay time of the pulsed radiation agrees fairly well with that measured by the photoconductivity decay method.

• 社団法人応用物理学会の論文
• 1963-09-15

著者

• Uchida Ichizo

  Research Laboratories Nippon Electric Co. Ltd.

• Uchida I.

  Research Laboratories, Nippon Electric Co. Ltd.

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• Impedance Changes Induced by Photoconductive Effect in ZnS:Cu, Cl Phosphors

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