Thermal Oxidation of Silicon

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概要

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• Some experiments concerning the mechanism of the thermal oxidation of silicon, are described. Experiments with a radioactive tracer using the sectioning technique indicate strongly that during the thermal oxidation of silicon the diffusion of oxygen is responsible for the growth of the oxide film. The same technique is applied to the study of the oxidation of copper. A physical picture for the oxidation of metals in general is derived from these series of experiments. Penetration curve for the diffusion of oxygen during the oxidation of silicon is obtained from infrared absorption measurements using the sectioning technique.

• 社団法人応用物理学会の論文
• 1963-01-15

著者

• Karube Norio

  Tokyo Laboratory Matsushita Electric Corporation

• YAMAMOTO Kakuji

  Tokyo Metropolitan Radio-isotope Center

• KAMIYAMA Masahide

  Department of Electronics, University of Tokyo

• Yamamoto Kakuji

  Tokyo Metropolitan Institute For Radiological Research

• Kamiyama Masahide

  Department Of Electronics University Of Tokyo

• Kamiyama Masahide

  Department Of Applied Physics Faculty Of Engineering University Of Tokyo:(present Address) Departmen

• Karube N.

  Tokyo Laboratory, Matsushita Electric Corporation

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