Microplasmas in Silicon p-n Junctions
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概要
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Experiments are made on the microplasma pulses at the onset of avalanche breakdown in silicon p-n junctions. Critical experiments show that the carrier multiplication process is the most important in the turn-on probabilities, which are determined to vary exponentially with the applied voltage. The turn-off probability is qualitatively explainable by McIntyre's theory. The dimension and other characteristics of a microplasma region are also discussed. Rates of variation of the breakdown voltage with temperature and pressure are calculated under the assumption that hot electrons are predominantly scattered by optical phonons. The calculated results agree well with observations.
- 社団法人応用物理学会の論文
- 1962-10-15
著者
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Suzuki Katuhisa
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
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MAEDA Keiji
Central Research Laboratory, Tokyo Shibaura Electric Co., Ltd.
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Maeda K.
Central Research Laboratory, Tokyo Shibaura Electric Co., Ltd.