BH InGaAsP Lasers with an LPE Grown Semi-Insulating Layer

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概要

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• DCPBH lasers with LPE grown cobalt-doped semi-insulating InP layer for lateral current confinement are described. The lasers with this cobalt-InP layer have higher external quantum efficiencies than the ones without. Low threshold current lasers (15-35 mA) are obtained for active region width of 2-3 μm.

• 社団法人応用物理学会の論文
• 1986-06-20

著者

• Yu P.

  Department Of Electrical Engineering And Computer Sciences University Of California At San Diego La

• SHI S.

  Department of Orthopedics, Beijing Army General Hospital

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