Origins of Midgap Electron Traps in Plastically Bent GaAs_<1-x>P_x Ternary Alloys

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概要

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• Electron traps in plastically bent VPE n-GaAs_<1-x>P_x (0 ≤ x ≤ 1 ) have been investigated using DLTS. While EL2 is dominant at x ≲ 0.5, two additional levels, one a midgap (EP1) and the other a deeper (EP2) level, dominate at x ≳ 0.55. The energy level of EP1 at x=1.0 is in good agreement with that of the antisite P_<Ga> defect level in GaP estimated using ESR studies. EP2 energy levels have little dependence on x. EP1 as well as EL2 shows alloy broadening in DLTS spectra while EP2 remains unchanged. These findings indicate that EL2 and EP1 are due to antisite As_<Ga> and P_<Ga> defects, respectively. EP2 is attributable to group V atom site defects.

• 社団法人応用物理学会の論文
• 1986-03-20

著者

• Chino Ken'ichi

  Ntt Electrical Communication Laboratories

関連論文

• Origins of Midgap Electron Traps in Plastically Bent GaAs_P_x Ternary Alloys

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