Poly-GaAs Thin Film Deposited on Silica Substrate by RF Sputtering and Its Light Transmissional Characteristics

スポンサーリンク

概要

• 論文の詳細を見る

• We have deposited polycrystalline GaAs thin film on silica glass by rf-sputtering polycrystalline GaAs target in an atmosphere of As_4. The surface of the film is smooth like a mirror. Its growth rate is around 6 μm/h. From X-ray diffraction analysis, it is known that this film is polycrystalline consisting of mostly GaAs <111> oriented crystallites and partly <110> oriented ones. Analysis of film light transmissional characteristics by multichannel spectroscopy has shown that the light absorption edge of this film has red-shifted by 1,500 Å to around 10,200 Å in comparison with the single GaAs crystal absorption edge of 8,700 Å.

• 社団法人応用物理学会の論文
• 1986-11-20

著者

• Tsuji Seiji

  Electro-communication Laboratory Mitsubishi Cable Industries Ltd.

• Iri Eiji

  Opto-electronics Engineering Section Mitsubishi Cable Industries Ltd.

関連論文

• Poly-GaAs Thin Film Deposited on Silica Substrate by RF Sputtering and Its Light Transmissional Characteristics

スポンサーリンク