Selective MOCVD Growth for Application to GaAs/AlGaAs Buried Heterostructure Lasers

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概要

• 論文の詳細を見る

• This paper presents the first successful application of a selective MOCVD growth to fabrication of a planar buried heterostructure laser diode. Double heterostructure of GaAs/AlGaAs laser was grown at atmospheric pressure, and the second-step selective growth for making a burying AlGaAs semi-insulating layer was carried out at low pressure. Resistivity of the undoped AlGaAs layer, controlled by changing V/III ratio, was more than 10^7Ω・cm at V/III=100. The lasing wavelength was 879 nm and the threshold current of CW operation was 20 mA at room temperature.

• 社団法人応用物理学会の論文
• 1986-01-20

著者

• Kashiwa Susumu

  Central Research Laboratory The Furukawa Electric Co. Lid.

• IWASAKI Tamotsu

  Central Research Laboratory, The Furukawa Electric Co., Lid.

• MATSUO Nozomu

  Central Research Laboratory, The Furukawa Electric Co., Lid.

• MATSUMOTO Narihito

  Central Research Laboratory, The Furukawa Electric Co., Lid.

• Matsuo Nozomu

  Central Research Laboratory The Furukawa Electric Co. Lid.

• Iwasaki Tamotsu

  Central Research Laboratory The Furukawa Electric Co. Lid.

関連論文

• Selective MOCVD Growth for Application to GaAs/AlGaAs Buried Heterostructure Lasers

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