New Material for p-Type Window Layer in a-Si Solar Cells

概要

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We have found a new wide band gap material and applied it as a window layer in a-Si solar cells. Films are deposited by rf-glow discharge method with NO/SiH_4/H_2 mixtures. IR spectra show that films contain Si, N, O and H (a-Si:O:N:H). Increasing NO/SiH_4 ratio, the optical gap widen and the refractive index decreases. The performance of solar cells using an a-Si:O:N:H p-layer has been improved because of the increase in incident light into the i-layer. Moreover, the measurement of photodegradation indicates that the cell efficiency decreases by less than 1% under illumination with AM1 100 mW/cm^2 for 10 hrs.
社団法人応用物理学会の論文
1986-01-20