Low Interface Recombination Velocity in GaAs-(Al, Ga) As Double Heterostructures Grown by Metal Organic Vapour Phase Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• The interface recombination velocity in GaAs-(Al, Ga) As double heterostructures has been investigated at room temperature. The structures were grown by metal organic vapour phase epitaxy using the so-called "chimney" reactor. With the technique of photoluminescence decay, interface recombination velocities as low as 53 cm/s were found for nisotype structures. For injection laser structures the lowest interface recombination velocity obtained was about 100 cm/s at high injection levels as deduced from luminescence efficiency measurements.

• 社団法人応用物理学会の論文
• 1985-09-20

著者

• Leys M.r.

  Philips Research Laboratories

• Roozeboom F.

  Philips Research Laboratories

関連論文

• Low Interface Recombination Velocity in GaAs-(Al, Ga) As Double Heterostructures Grown by Metal Organic Vapour Phase Epitaxy

スポンサーリンク