Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs

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概要

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• The quantitative effect of dislocations on the sheet carrier concentration of a Si-implanted and annealed layer in semi-insulating GaAs is investigated microscopically by the van der Pauw method using small Hall chips with a 40×40μm^2 measurement area. Dislocations affect the sheet carrier concentration within about a 75μm radius area, and the carrier concentration increases 3×10^<15>cm^<-3> per dislocation in this area.

• 社団法人応用物理学会の論文
• 1985-02-20

著者

• Hyuga Fumiaki

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs

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