Epitaxial Growth of Bi_<12>SiO_<20> Films by Chemical Vapor Deposition

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概要

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• The growth of Bi_<12>SiO_<20> films on (111) Bi_<12>SiO_<20> substrates has been attempted by chemical vapor deposition. With the source material combination of Bi metal and silicon alkoxide, transparent epitaxial films have been grown in the wide composition range of x=10.8-17.6, where x denotes the ratio of Bi to Si in the grown films.

• 社団法人応用物理学会の論文
• 1985-12-20

著者

• Nagao Yasuyuki

  Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.

• Mimura Yoshinori

  Research and Development Laboratories, Kokusai Denshin Denwa Co., Ltd.

• Mimura Yoshinori

  Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.

関連論文

• Epitaxial Growth of Bi_SiO_ Films by Chemical Vapor Deposition

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