Investigations of N-H and Si-N Bonding Configurations in Hydrogenated Amorphous Silicon Nitride Films by Infrared Absorption Spectroscopy

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概要

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• The infrared absorption spectra of hydrogenated amorphous silicon nitride (a-SiN:H) films have been measured. Two absorption bands for the NH_2 bonding group appear at 〜3450cm^<-1> and 〜l550cm^<-1>, which are assigned to the NH_2 stretching mode and NH_2 bending mode, respectively. Isochronal annealing measurements show that the NH_2 bonding configuration has more excellent thermal stability than the NH bonding configuration. In addition, the change of the integrated absorption intensity of the Si-N asymmetric stretching mode is observed with increasing annealing temperature.

• 社団法人応用物理学会の論文
• 1985-11-20

著者

• Ehara Shaw

  Central Research Laboratories Sharp Corporation

• Narikawa Shiro

  Central Research Laboratories, Sharp Corporation

• Kojima Yoshimi

  Central Research Laboratories, Sharp Corporation

• Narikawa S

  Central Research Laboratories Sharp Corporation

• Narikawa Shiro

  Central Research Laboratories Sharp Corporation

• Kojima Yoshimi

  Central Research Laboratories Sharp Corporation

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• Investigations of N-H and Si-N Bonding Configurations in Hydrogenated Amorphous Silicon Nitride Films by Infrared Absorption Spectroscopy

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