The Raman Spectrum of Carbon in Silicon

概要

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Raman spectroscopy is used to characterize carbon-doped silicon samples prepared by ion implantation and pulsed laser annealing. Sharp lines are observed in the Raman spectra due to the ^<12>C local mode at 604A±1cm^1 and the ^<13>C local mode at 586-1 cm^1. Identical spectra are obtained from a given carbon implant whether it is annealed using a 10 ns pulsed ruby laser or the significantly longer pulse of an R6G dye laser. It is shown that Raman spectroscopy has sufficient sensitivity to detect striated carbon distributions in as-grown commercial silicon. Finally, at high carbon density, where the local modes begin to broaden in the implanted and laser-annealed samples, a disorder-induced first-order Raman spectrum is observed produced by the mass defect of the substitutional carbon.
社団法人応用物理学会の論文
1985-10-20