GaAs and GaAlAs Reactive Ion Etching in BCl_3-Cl_2 Mixture

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概要

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• The reactive ion etching of GaAs and GaAlAs in BCl_3-Cl_2 mixture has been investigated. Under anisotropic etching conditions, clean etch profiles have been obtained with etch rates as high as 0.6 μm/min for GaAs and 0.4 μm/min for Ga_<0.55>Al_<0.45>As. No lag time has been observed between ignition of the gas plasma and subsequent etching. The variation in etch rates from run to run is less than±10%. The etch rates for the organic resist (AZ-1350) are so slow that deeply etched features (4-5 μm) with vertical side-walls have been obtained using a layer of the resist thin enough to maintain its high resolution.

• 社団法人応用物理学会の論文
• 1984-09-20

著者

• Tamura Hideo

  Electron Device Engineering Laboratory Toshiba Corporation

• Kurihara Haruki

  Electron Device Engineering Laboratory Toshiba Corporation

関連論文

• GaAs and GaAlAs Reactive Ion Etching in BCl_3-Cl_2 Mixture

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