High-Quality InGaAs Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Using a Vertical Reactor

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概要

• 論文の詳細を見る

• This paper presents the first successful application of a vertical reactor system to the MOVPE growth of high-quality InGaAs on InP substrates. The growth is carried out at low pressure, using triethylindium, triethylgallium, and arsine as source materials. Epitaxial layers with carrier concentrations 10^<15> cm^<-3>, electron mobilities 8000 cm^2/(Vs) (300 K) and 30000 cm^2/(Vs) (77 K), and photoluminescence half-width 15 meV (77 K) are obtained. The composition variation over the grown layer surface is very small.

• 社団法人応用物理学会の論文
• 1984-08-20

著者

• Kuroiwa Koichi

  Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation:(present Add

• Nojima Shunji

  Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

• OISHI Mamoru

  Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation

• Oishi Mamoru

  Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

関連論文

• High-Quality InGaAs Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Using a Vertical Reactor

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