In Situ Observation on Melt Growth Process of Tin Crystal by Means of Synchrotron X-Ray Topography
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概要
- 論文の詳細を見る
Melting and growth processes of a thin Sn crystal with low dislocation density have been investigated using synchrotron radiation and a TV imaging system. When the melting rate is less than 2.7 mm/min, the melting interface follows a circular equal-melting point interface and appears to be homogeneously smooth. No facet growth is seen at a growth rate of 2.3 mm/min. Most of the dislocations do not propagate into a newly grown crystal and the homogeneous solidification results in a nearly perfect crystal. Dislocations and slip bands were found to generate from a part where the solidification was completed.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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NITTONO Osamu
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology
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Nittono Osamu
Department Of Metallurgy Tokyo Institute Of Technology
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Nittono Osamu
Department Od Metallurgical Engineering Tokyo Institute Of Technology
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OGAWA Taro
Department of Orthopedic Surgery, Hirosaki University School of Medicine
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Ogawa Taro
Department Of Metallurgy Tokyo Institute Of Technology:(present Address)central Research Laboratory
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NAGAKURA Sigemaro
Department of Mechanical Engineering, The Technological University of Nagaoka
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GONG Sheng
Department of Metallurgy, Tokyo Institute of Technology
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Gong Sheng
Department Of Metallurgy Tokyo Institute Of Technology
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Gong Sheng
Department Of Metallurgy Faculty Of Engineering Tokyo Institute Of Technology
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NITTONO Osamu
Department of Metallurgy, Tokyo Institute of Technology
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