Determination of Impurity Distribution in p-Type Si Epitaxial Layers by C-V Analysis of Sm on p-Type Si Schottky Diodes

スポンサーリンク

概要

• 論文の詳細を見る

• Schottky diodes were formed on p-type Si by evaporating Sm in a vacuum. Impurity concentration determined by the C-V analysis of the Schottky diodes coincided quite well with that calculated from four-point resistivity, making this method suitable for accurately measuring the impurity distribution in p-type epitaxial layers.

• 社団法人応用物理学会の論文
• 1984-05-20

著者

• Miki Katsuhiko

  Expitaxial Growth Section Shin-etsu Handotai Co. Ltd.

• YOSHIDA Naosato

  Research and Development Center, Shin-Etsu Handotai Co. Ltd.

• Yoshida Naosato

  Research And Development Center Shin-etsu Handotai Co. Ltd.

関連論文

• Determination of Impurity Distribution in p-Type Si Epitaxial Layers by C-V Analysis of Sm on p-Type Si Schottky Diodes

スポンサーリンク