Characterisation of Stoichiometry in GaAs by X-Ray Intensity Measurements of Quasi-Forbidden Reflections

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概要

• 論文の詳細を見る

• Deviation from stoichiometry in GaAs was detected in an accuracy of c_<Ga>-c_<As>=3×10^<-5> by measuring variations of integrated intensities of weak quasi-forbidden reflections of X-rays. Fairly large deviations of the order of 10^<-4> with higher atomic concentrations in As lattice planes were found for undoped semi-insulating liquid-encapsulated Czochralski (LEC) grown crystals compared with horizontal Bridgaman (HB) grown ones. The radial distribution of the deviation in a wafer was observed to have a total correlation with the distribution of dislocations. Capability of the method is demonstated by results obtained for epitaxial layers grown by VPE, LPE and MBE.

• 社団法人応用物理学会の論文
• 1984-05-20

著者

• Fujimoto Isao

  Broadcasting Science Research Laboratories Of Nippon Hoso Kyokai

関連論文

• Characterisation of Stoichiometry in GaAs by X-Ray Intensity Measurements of Quasi-Forbidden Reflections
• Pendellosung Measurement of the (222) Reflection in Silicon

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