Nb_3Sn-Pb Josephson Junctions Using Nb_3Sn Formed by Reaction of Nb/Sn Dual-Layer Films

スポンサーリンク

概要

• 論文の詳細を見る

• Josephson tunnel junctions have been fabricated using Nb_3Sn formed by the reaction at 800℃ in a high vacuum between an rf sputtered Nb film and Sn film evaporated over the Nb film. An rf plasma oxidation technique was used for the formation of the tunneling barriers and Pb was deposited for the counter-electrodes. Current-voltage characteristics at 4.2 K show a sharp current rise at a voltage of 4.35 mV. The subgap resistance is more than 7 times the normal resistance. This work shows that high quality Nb_3Sn base layers can be formed with a very simple and practical technique suitable for microdevice applications.

• 社団法人応用物理学会の論文
• 1984-02-20

著者

• Tsuge Hisanao

  Department Of Electrical And Computer Engineering University Of Wisconsin-madison:(present Address)m

• NORDMAN James

  Department of Electrical and Computer Engineering, University of Wisconsin-Madison

• Nordman James

  Department Of Electrical And Computer Engineering University Of Wisconsin-madison

関連論文

• Nb_3Sn-Pb Josephson Junctions Using Nb_3Sn Formed by Reaction of Nb/Sn Dual-Layer Films

スポンサーリンク