Characterization of LP-MOCVD Grown (Al, Ga)As/GaAs Heterostructures by Photoluminescence : Single Heterojunction and Inadvertent Quantum Wells

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概要

• 論文の詳細を見る

• Photoluminescence (PL) was used to detect rapid alloy compositional fluctuations which were found in (Al, Ga)As/GaAs heterostructures grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). PL data are employed to estimate the thickness and aluminum composition of the resulting inadvertent quantum well. A way to eliminate these artifacts was found. Using the improved growth procedures, modulation-doped heterostructures showing two-dimensional electron-gas behavior were then achieved.

• 社団法人応用物理学会の論文
• 1984-12-20

著者

• Lambert G.

  Gte Laboratories Incorporated

• ZEMON S.

  GTE Laboratories Incorporated

• BLACK J.

  GTE Laboratories Incorporated

• NORRIS P.

  GTE Laboratories Incorporated

• LEE J.

  GTE Laboratories Incorporated

• Black J.

  Gte Laboratories Incorporated:(present Address)mit Lincoln Laboratory

関連論文

• Characterization of LP-MOCVD Grown (Al, Ga)As/GaAs Heterostructures by Photoluminescence : Single Heterojunction and Inadvertent Quantum Wells

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