LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution Technique

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概要

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• LPE growth condition and characteristic of GaInAsP lattice matched with (100)GaAs by a two-phase-solution growth technique is reported. This technique is applied to the LPE growth at T_g=840℃ and high quality Ga_<0.55>In_<0.45>As_<0.07>P_<0.93> is obtained.

• 社団法人応用物理学会の論文
• 1984-01-20

著者

• Kawanishi Hideo

  Kohgakuin University Department Of Electronic Engineering

• SUZUKI Takeshi

  Kohgakuin University, Department of Electronic Engineering

• Suzuki Takeshi

  Kohgakuin University Department Of Electronic Engineering

関連論文

• LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution Technique

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