Surface Resonances in GaAs(100) Surface

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概要

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• Low energy region of the secondary yield of GaAs(100) surface contains fine structure which is examined in the differential yield mode. The main peak observed at 16.2 eV for normal incidence (θ=0°) is identified as surface resonance due to simultaneous grazing emergence of (11) diffracted beams. For angles of incidence θ=2° and 3° the main peak splits into a doublet with peak energies at 15.5, 17.3 eV and 15, 18 eV respectively. The additional peaks at 3.7 and 9 eV in the fine structure are believed to be due to plasmon threshold mechanism.

• 社団法人応用物理学会の論文
• 1983-09-20

著者

• Suleman M.

  Surface Physics Laboratory Centre For Solid State Physics Punjab University New Campus

• RASHID Y.

  Surface Physics Laboratory, Centre for Solid State Physics, Punjab University, New Campus

• Rashid Y.

  Surface Physics Laboratory Centre For Solid State Physics Punjab University New Campus

関連論文

• Surface Resonances in GaAs(100) Surface

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