Life Test of 30 mW GaAlAs TAL Laser Grown by OMVPE

スポンサーリンク

概要

• 論文の詳細を見る

• Operating life data taken at 70 and 80℃ at an output power level of 30 mW cw from one facet are presented for a protonisolated stripe, (Ga, Al)As Thin Active Layer DH laser grown by Organo-Metallic Vapor Phase Exitaxy, and mounted epi-side up on a Si submount with Sn solder. Median life of 450 h at 80℃ ambient and 2500 h at 70℃ ambient was observed. The failure mode is gradual increase of threshold current combined with decrease of the kink power level below the operating point.

• 社団法人応用物理学会の論文
• 1983-07-20

著者

• Engelmann R.

  Hewlett-packard Laboratories

• VILMS J.

  Hewlett-Packard Laboratories

関連論文

• Life Test of 30 mW GaAlAs TAL Laser Grown by OMVPE

スポンサーリンク