Photo-Chemical Vapor Deposition of Silicon Nitride Film by Direct Photolysis

概要

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Silicon nitride film was deposited onto a silicon substrate using a photo-CVD (chemical vapor deposition) technique, which is based on direct photolysis of SiH_4/NH_3 gas mixture by 185 nm ultraviolet light from a mercury lamp. Deposition rate of 10 nm/minute was achieved without using any photo-sensitizer such as mercury vapor with a photo-CVD system developed for this direct photolysis. Infrared absorption spectrum, Auger spectrum, refractive index and etch rate in buffered HF solution were measured on the deposited film. It was revealed that the film contains 1.4×10^<22> cm^<-3> of hydrogen atoms and is nitrogen-rich in its composition. Breakdown field strength, leakage current and surface charge density characteristics were superior to those of conventional plasma-CVD silicon nitride film.
社団法人応用物理学会の論文
1983-12-20