InGaAsP/InP Mushroom Stripe Lasers with Low CW Threshold and High Output Power

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概要

• 論文の詳細を見る

• We report on InGaAsP/InP mushroom stripe lasers, for which a technique has been developed to precisely control the width of the active layer. Both p-substrate upside up mounted and n-substrate upside down mounted devices were fabricated. The lasers emit at λ=1.3 μm having a CW threshold as low as 18 mA, an external differential efficiency of up to 0.30 W/A at 200℃ and a characteristic temperature T_O=65 K. An output CW power in the fundamental transverse mode of 18 mW/mirror was obtained for upside up mounting. A 960 Mbit/sec RZ modulation is demonstrated.

• 社団法人応用物理学会の論文
• 1983-11-20

著者

• Kuphal E

  Forschungsinstitut Der Deutschen Bundespost Beim Ftz

• Burkhard H

  Forschungsinstitut Der Deutschen Bundespost Beim Ftz

関連論文

• InGaAsP/InP Mushroom Stripe Lasers with Low CW Threshold and High Output Power

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