Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor phase epitaxy has been investigated over a range of substrate temperature from 500℃ to 700℃. Low temperature photoluminescence from single quantum wells less than 150Å in width has been observed at low excitation levels. Evidence of a graded heterostructure interface was observed in samples grown at higher substrate temperatures.

• 社団法人応用物理学会の論文
• 1983-10-20

著者

• OHNO Hideo

  School of Life Studies, Sugiyama Jogakuen Univ.

• Eastman L.f.

  School Of Electrical Engineering Cornell University

• SHEALY J.R.

  School of Electrical Engineering, Cornell University

• WICKS G.W.

  School of Electrical Engineering, Cornell University

• Ohno Hideo

  School Of Electrical Engineering Cornell University:department Of Electrical Engineering Hokkaido Un

• Wicks G.w.

  School Of Electrical Engineering Cornell University

• Shealy J.r.

  School Of Electrical Engineering Cornell University

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• Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy

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