Selective Removal of Iron Garnet Film on Transparent Substrate by Laser Etching
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概要
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Iron garnet film on transparent substrate Gd_3Ga_5O_<12> immersed in phosphoric acid was etched bar the irradiation of an Ar ion laser beam. Localized etching of the film occurred in the irradiated region, and the etching terminated when the thickness of the film became zero. Laser etching is expected to be an useful fabrication technique for garnet devices.
- 社団法人応用物理学会の論文
- 1982-06-20
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