Blink Furnace Annealing of Ion-Implanted Silicon

概要

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A very short annealing of a few seconds duration was carried out by irradiating ion-implanted Si wafers with infra-red radiation emitted from hot Si walls. At low temperatures, the activation of impurities was mostly due to the recrystallization of the amorphous layers and to the annihilation of ion-implanted damage; and at high temperatures to thermal agitation. Full activation was generally realized by blink annealing of 10 s at 1000℃ and 1 s at 1100℃ without noticeable impurity diffusion. Supersaturation of As was electrically observed.
社団法人応用物理学会の論文
1982-01-05