Electrical Characterization of Extremely Thin(2.7 nm)Oxynitride and Oxide of Silicon Grown by N_2O Plasma and Wet Oxidation at Low Temperatures:A Comparison

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概要

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• Extremely thin(2.7 nm)oxynitride and oxide of silicon are grown by N_2O plasma and wet oxidation at low temperatures. These extremely thin dielectrics are characterized by fabricating metal oxide semiconductor(MOS)tunnel diodes, and studying their capacitance-voltage(C-V), and conductance-voltage(G-V)characteristics. The density of interface states(D_<it>)for the as grown plasma oxynitride is high(2.1 × 10^<12> cm^<-2>・eV〜<-1>)compared to that of wet oxide(3.8 × 10^<11> cm^<-2>・eV^<-1>), the density of fixed oxide charges(Q_f)are comparable(〜5 × 10^<12> cm^<-2>)in both the cases. It is shown that, post oxidation annealing(350°C)of the plasma oxynitride improves the quality of the Si/oxynitride interface.

• 社団法人応用物理学会の論文
• 2000-02-15

著者

• Bhat Kunchinadka

  Department Of Electrical Engineering Indian Institute Of Technology

• Subrahmanyam Aryasomayajula

  Department Of Physics Indian Institute Of Technology

• Bhat Vishwanath

  Department Of Physics Indian Institute Of Technology

関連論文

• Electrical Characterization of Extremely Thin(2.7 nm)Oxynitride and Oxide of Silicon Grown by N_2O Plasma and Wet Oxidation at Low Temperatures:A Comparison

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