Characteristics in the Growth of the YBa_2Cu_3O_x and YBaSrCu_3O_x Crystalline Films : Electrical Properties of Condensed Matter

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概要

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• The change of the structure of the sputter-deposited films of YBa_2Cu_3O_x and YBaSrCu_3O_x by thermal annealing was investigated using X-ray diffraction spectrometry. The YBa_2Cu_3O_x films crystallized in the distorted perovskite structure when annealed above 940℃ while the YBaSrCu_3O_x above 980℃. The merging of (200),(020) and (006) lines was observed in the YBa_2Cu_3O_x annealed at 800℃ or in the YBaSrCu_3O_x annealed between 800℃ and 940℃. It was also found that by the annealing of the films of YBaSrCu_3O_x, the YBa_2Cu_3O_x crystals grew preferentially below 900℃ while the YBaSrCu_3O_x crystals grew above 900℃.

• 社団法人応用物理学会の論文
• 1988-07-20

著者

• Yoshida Masashi

  Technical Research Laboratory Sumitomo Metal Industry

関連論文

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• Characteristics in the Growth of the YBa_2Cu_3O_x and YBaSrCu_3O_x Crystalline Films : Electrical Properties of Condensed Matter

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