EL2°Distribution in the Vicinity of Dislocations in GaAs-In Materials : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る

• We have recently shown that, contrary to the well-reputed opinion., the EL2°centers in GaAs undoped materials are not especially concentrated on dislocations: the cell pattern, in particular, does not disappear after photoquenching at Liquid Nitrogen Temperature. In this paper we shall complete this study with details of the EL2°densities in the vicinity of individual dislocations in GaAs-In materials. Laser Scaring Tomography and Infra Red Transmission images will be analyzed complementarily. Grown-in axial dislocations appear to be surrounded by a wide EL2-rich cylindrical zone, whereas the dislocation itself is not to be considered as a large reservoir of gettered EL2 centers.

• 社団法人応用物理学会の論文
• 1988-05-20

著者

• Gall P.

  Center D'etudes D'electronique De Montpellier

• Fillard Jp.

  Center D'etudes D'electronique De Montpellier

• ASGARINIA M.

  Center d'Etudes d'Electronique de Montpellier

• CASTAGNE M.

  Center d'Etudes d'Electronique de Montpellier

• BAROUDI M.

  Center d'Etudes d'Electronique de Montpellier

• Baroudi M.

  Center D'etudes D'electronique De Montpellier

• Asgarinia M.

  Center D'etudes D'electronique De Montpellier

• Castagne M.

  Center D'etudes D'electronique De Montpellier

関連論文

• EL2°Distribution in the Vicinity of Dislocations in GaAs-In Materials : Semiconductors and Semiconductor Devices

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