Novel High-Performance N-AlGaAs/InGaAs/N-AlGaAs Pseudomorphic Double-Heterojunction Modulation-Doped FETs : Advanced III-V Compound Semiconductors and Silicon Devices(<Special Section>Solid State Devices and Materials 1)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Ishikawa Osamu
Opto-electronics Laboratory Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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NISHII Katsunori
Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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MATSUNO Toshinobu
Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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YAGITA Hideki
Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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INOUE Kaoru
Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Yagita Hideki
Opto-electronics Laboratory Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Nishii Katsunori
Opto-electronics Laboratory Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Matsuno Toshinobu
Opto-electronics Laboratory Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Inoue Kaoru
Opto-electronics Laboratory Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.