Three-Dimensional Quantum Well Ellects in Ultrafine Silicon Particles : Materials and Device Structures with Atomic Scale Resolution(<Special Section>Solid State Devices and Materials 1)

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概要

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• The mostly crystallized Si:H having a wide optical band gap and showing a visible photoluminescence at room temperature, has been fabricated by means of a planar magnetron rf sputtering technique in hydrogen gas onto a low temperature (about 100 K) substrate. The materials consist of very small crystalline silicon particles (average diameters: 2-5 nm) surrounded by =SiH_2 groups. The observed macroscopic physical properties are explained by the three-dimensional quantum size effects in the ultrafine silicon particles.

• 社団法人応用物理学会の論文
• 1988-11-20

著者

• Furukawa Shoji

  Kyusyu Institute Of Technology

• Miyasato Tatsuro

  Kyusyu Institute Of Technology

関連論文

• Three-Dimensional Quantum Well Ellects in Ultrafine Silicon Particles : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)

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